Mn-doped SiGe thin films grown by UHV/CVD with room-temperature ferromagnetism and high hole mobility

In this work, silicon-germanium (SiGe) thin films are epitaxially grown on Ge substrates by ultra-high vacuum chemical vapor deposition and then doped with Mn element ion-implantation subsequent rapid thermal annealing (RTA). The characterizations show that the epitaxial SiGe single-crystalline uniform tensile strain become polycrystalline after ion implantation following RTA. magnetization measurements indicate annealed exhibit concentration-dependent ferromagnetism up to 309 K X-ray magnetic circular dichroism reveal spin orbital moments from substitutional element. To minimize influence of anomalous Hall effect, magneto-transport at a high field 31 T 300 performed obtain hole mobility, which reaches record-high value ∼1230 cm2 V−1 s−1, owing crystalline quality strain-induced energy band modulation samples. first demonstration Mn-doped room-temperature carrier mobility may pave way for practical semiconductor spintronic applications.